, lj nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRFF130 8.0a, 100v, 0.180 ohm, n-channel power mosfet this n-channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. features ? 8.0a, 100v single pulse avalanche energy rated soa is power dissipation limited nanosecond switching speeds linear transfer characteristics high input impedance related literature ordering information part number IRFF130 package to-205af brand IRFF130 symbol note: when ordering, use the entire part number. 6 s packaging jedec to-205af drain (case) source gate nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
IRFF130 absolute maximum ratings tc = 25c, unless otherwise specified IRFF130 units drain to source voltage (note 1) vds 1 v drain to gate voltage (rqs = 20kll) (note 1) vdgr 100 v continuous drain current id 8.0 a pulsed drain current (note 3) idm 32 a gate to source voltage vgs 20 v maximum power dissipation, tc = 25c pd 25 w linear derating factor 0.2 w/c single pulse avalanche energy rating (note 4) eas 69 mj operating and storage temperature tj tstg "55 to 150 c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s tl 300 c package body for 10s, see techbrief 334 tpkg 260 c caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: j = 25cto125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate threshold voltage zero gate voltage drain current on-state drain current (note 2) gate to source leakage current drain to source on resistance (note 2) forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance, junction to case thermal resistance, junction to ambient symbol bvdss vgs(th) !dss bfon) !gss rds(on) 9fs 'd(on) tr 'd(off) tf qg(tot) qgs qgd ciss coss crss ld ls rfljc r9ja test conditions id = 250ua, vgs = ov (figure 10) vgs = vds. id = 250na vds = rated bvdss, vgs = ov vds = 0.8 x rated bvdss, vgs = ov, tc = 125c vds > ld(on) x rds(on)max , vgs = 10v vgs = 20v id - 4.0a, vgs = 1v (figures 8, 9) vds > 'd(on) x rds(on)max , id = 4.0a (figure 12) vdd = 0-5 x rated bvdss, id - 8-oa, rg = 9-1ij. vgs- 10v, r|_ = 6.mfor\ rl-4.9qforvdss-40(f switching times are essent operating temperature dss - 50v, gures17, 18)mosfet ally independent of vgs = 10v, id = 8.0a, vds = 0.8 x rated bvdss (figures 14, 19, 20) gate charge is essentially independent of operating temperature vds = 25v, vgs = ov, f = 1 mhz (figure 1 1 ) measured from the drain lead, 5.0mm (0.2in) from header to center of die measured from the source lead, 5.0mm (0.2in) from header to source bonding pad modified mosfet symbol showing the internal device inductances free air operation min 100 2.0 - - 8.0 - - 4.0 - - - - - - - - - - - - typ - - - - - - 0.14 5.5 30 80 50 80 18 9.0 9.0 600 300 100 5.0 15 - - max - 4.0 25 250 - 100 0.180 - 50 150 100 150 30 - - - - - 5.0 175 units v v ma ma a na n s ns ns ns ns nc nc nc pf pf pf nh nh c/w c/w
IRFF130 source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 3) source to drain diode voltage (note 2) reverse recovery time reverse recovery charge symbol isd !sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction rectifier (f < >d ^) y ' s tj = 25c, isd = 8.0a, vgs = 0v (figure 13) tj = 150c, isd = 8.0a, dlso/dt = 100a/ns tj = 150c, isd = 8.0a, dlso/dt = 100a/ns min - - typ - - 300 1.5 max 8.0 32 2.5 - ? units a a v ns uc notes: 2. pulse test: pulse width < 300us, duty cycle < 2%. 3. repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 25v, starting tj = 25c, l = 1.62mh, rg = 25n, peak ias = 8.0a (figures 15, 16). typical performance curves unless otherwise specified cc u < n power dissipation multipl o p o o - 3 ro ** b> bo c \0 100 150 tc, case temperature |
